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MJD32C-13

Manufacturer:

Diodes Incorporated

Mfr.Part #:

MJD32C-13

Datasheet:
Description:

BJTs TO-252 SMD/SMT PNP 1.56 W Collector Base Voltage (VCBO):100 V Collector Emitter Voltage (VCEO):100 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Length6.8 mm
Width6.2 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height2.4 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
PolarityPNP
REACH SVHCNo SVHC
TypeGeneral Purpose
Output Current1.4 A
Max Power Dissipation1.56 W
Power Dissipation1.56 W
Max Collector Current3 A
Collector Emitter Breakdown Voltage100 V
Transition Frequency3 MHz
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)100 V
Max Breakdown Voltage100 V
Gain Bandwidth Product3 MHz
Collector Base Voltage (VCBO)100 V
Collector Emitter Saturation Voltage1.2 V
Emitter Base Voltage (VEBO)6 V
hFE Min10
Schedule B8541290080
Max Cutoff Collector Current1 µA
Transistor TypePNP

Stock: 3

Distributors
pcbx
Unit Price$0.29981
Ext.Price$0.29981
QtyUnit PriceExt.Price
1$0.29981$0.29981
10$0.26953$2.69530
50$0.24230$12.11500
100$0.21392$21.39200
500$0.18886$94.43000
1000$0.18180$181.80000
3000$0.17500$525.00000
5000$0.16846$842.30000